A -type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at , where cm is the diffusion length of electrons. Assume electronic charge, C. The profiles of photo-generation rate of carriers and the recombination rate of excess minority carriers () are shown. Under these conditions, the magnitude of the current density due to the photo-generated electrons at is ________ mA/cm (rounded off to two decimal places).
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A bar labelled 'Semiconductor' spans x = -2l_n to +2l_n. Below it are two plots against x, each with ticks at -2l_n, -l_n, 0, l_n, 2l_n. (1) Photo generation rate (cm^-3/s): a rectangular pulse of height 10^20 for -l_n < x < l_n and 0 for l_n < |x| < 2l_n. (2) Excess minority carrier recombination rate (cm^-3/s), labelled R = 10^20 exp(-|x|/l_n): the curve peaks at 10^20 at x = 0 and decays symmetrically only as far as x = ±l_n. There it steps down vertically, from 10^20 e^-1, to 0, and it stays 0 for l_n < |x| < 2l_n.