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GATE 2025 EC Q.48: solution and answer

GATE 2025 · ECQ.48 · 2 marks · MCQ

The electron mobility in a non-degenerate germanium semiconductor at 300 K is 0.38 m²/Vs.

The electron diffusivity at 300 K (in cm²/s, rounded off to the nearest integer) is ______.

(Consider the Boltzmann constant J/K and the charge of an electron C.)

  1. (A)

    26

  2. (B)

    98

  3. (C)

    38

  4. (D)

    10

See the question in the paper

Answer and solution

ANSWER

The correct answer is (B) 98 cm²/s.

Official answer: BSource: Official answer key, GATE 2025 EC (IIT Roorkee)

  1. Apply the Einstein relation:

  2. Compute the thermal voltage using the given constants:

  3. Compute diffusivity in SI units:

  4. Convert to (1 m = cm):

  5. Round off to the nearest integer: , matching option (B)

KEY IDEA

The Einstein relation links diffusivity and mobility: , the thermal voltage.

WATCH OUT FOR

Forgetting to convert from m²/s to cm²/s (multiply by 10⁴), which would give an answer near 0.0098 and no matching option, or misreading μn's units.

From the GATE 2025 EC paper. Every question of this paper · Download the full paper · All 9 Carrier transport questions, with notes

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