IAE Academy

GATE 2024 EC Q.61: solution and answer

GATE 2024 · ECQ.61 · 2 marks · NAT

Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of 100 nm, a fixed positive oxide charge of at the oxide-silicon interface, and a metal work function of 4.6 eV. Assume that the relative permittivity of the oxide is 4 and the absolute permittivity of free space is . If the flatband voltage is 0 V, the work function of the p-type silicon (in eV, rounded off to two decimal places) is ______.

See the question in the paper

Answer and solution

ANSWER

The work function of the p-type silicon is φ_s ≈ 4.32 eV.

Official answer: 4.10 to 4.50Source: Official answer key, GATE 2024 EC (IISc Bengaluru)

  1. Convert oxide thickness to cm and compute oxide permittivity: , and .

  2. Oxide capacitance per unit area:

  3. Flat-band condition with a fixed positive oxide charge at the oxide-silicon interface:

  4. Solve for the silicon work function:

  5. Compute the charge term:

  6. Substitute:

  7. Rounded to two decimal places:

KEY IDEA

The flatband voltage relates the metal-semiconductor work function difference to the effect of oxide charge: , with . Setting gives directly, once is found from the oxide thickness and permittivity.

WATCH OUT FOR

Forgetting to convert the oxide thickness from nanometres to centimetres (100 nm = cm) before computing , or mixing up the sign in and adding the charge term instead of subtracting it, which shifts the answer outside the accepted key range.

From the GATE 2024 EC paper. Every question of this paper · Download the full paper · All 7 MOS devices questions, with notes

More MOS devices questions