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GATE 2023 EC Q.61: solution and answer

GATE 2023 · ECQ.61 · 2 marks · NAT

In a semiconductor device, the Fermi-energy level is 0.35 eV above the valence band energy. The effective density of states in the valence band at is . The thermal equilibrium hole concentration in silicon at 400 K is _______ (rounded off to two decimal places). Given kT at 300 K is 0.026 eV.

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Answer and solution

ANSWER

The thermal equilibrium hole concentration in silicon at 400 K is 63.49 × 10¹³ cm⁻³.

Official answer: 60.00 to 70.00Source: Official answer key, GATE 2023 EC (IIT Kanpur)

  1. Given: Fermi level above valence band edge, (taken as unchanged with temperature, since no doping concentration is given to compute its shift). Effective density of states in the valence band, . Thermal voltage, .

  2. Hole concentration: .

  3. scales with temperature as :

  4. scales linearly with temperature:

  5. Compute the exponent:

  6. Compute :

KEY IDEA

Hole concentration is . Both (through the density-of-states scaling) and change with temperature, while the doping-fixed energy gap is taken as unchanged between 300 K and 400 K.

WATCH OUT FOR

Scaling only with temperature but forgetting to also scale (i.e. plugging carrier density with the value of in the exponential), which changes the exponent from about to about and gives an answer far outside the accepted range.

From the GATE 2023 EC paper. Every question of this paper · Download the full paper · All 9 Semiconductors questions, with notes

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